Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2969788
Reference38 articles.
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4. Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements
5. Temperature dependence of electron concentration in type-converted silicon by 1×1017 cm−2 fluence irradiation of 1 MeV electrons
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1. Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC;physica status solidi (b);2020-11-16
2. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion;Journal of Engineering Physics and Thermophysics;2020-07
3. Recrystallization of He-ion implanted 6H-SiC upon annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-02
4. Irradiation of sublimation-grown p-SiC with 0.9-MeV electrons;Technical Physics Letters;2014-08
5. Irradiation and annealing of p-type silicon carbide;AIP Conference Proceedings;2014
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