Temperature dependence of electron concentration in type-converted silicon by 1×1017 cm−2 fluence irradiation of 1 MeV electrons
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126265
Reference17 articles.
1. Radiation degradation of large fluence irradiated space silicon solar cells
2. Analysis of Radiation Damage to Si Solar Cells under High-Fluence Electron Irradiation
3. Type conversion in irradiated silicon diodes
4. Investigation of carrier removal in electron irradiated silicon diodes
5. Explanation for carrier removal and type conversion in irradiated silicon solar cells
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