Recrystallization of He-ion implanted 6H-SiC upon annealing
Author:
Funder
National Nature Science Foundation of China
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference37 articles.
1. Recent developments in SiC single-crystal electronics
2. Physical Properties of SiC
3. Structural and electronic properties of cubic, 2H, 4H, and 6HSiC
4. Formation of precipitates in heavily boron doped 4H-SiC
5. Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation
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