Free electron density and mobility in high-quality 4H–SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1332102
Reference25 articles.
1. Chapter 4 SiC Transistors
2. Nitrogen donors in 4H‐silicon carbide
3. Band-structure analysis of the conduction-band mass anisotropy in 6Hand 4HSiC
4. Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap
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