Lateral 1200V SiC schottky barrier diode with single event burnout tolerance
Author:
Funder
Engineering and Physical Sciences Research Council
Publisher
Elsevier BV
Reference25 articles.
1. Thermal damage in sic schottky diodes induced by se heavy ions;Abbate;Microelectronics Reliability,2014
2. Analysis of heavy ion irradiation induced thermal damage in sic schottky diodes;Abbate;IEEE Transactions on Nuclear Science,2015
3. Radiation effects in commercial 1200 v 24 a silicon carbide power mosfets;Akturk;IEEE Transactions on Nuclear Science,2012
4. High voltage thin layer devices (resurf devices);Appels,1979
5. Ion-induced energy pulse mechanism for single-event burnout in high-voltage sic power mosfets and junction barrier schottky diodes;Ball;IEEE Transactions on Nuclear Science,2020
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