Author:
Akturk A.,McGarrity J. M.,Potbhare S.,Goldsman N.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
97 articles.
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1. A Deep Insight Into the Ionizing Radiation Effects and Mechanisms on the Dynamic Characteristics of SiC MOSFETs;IEEE Transactions on Electron Devices;2024-02
2. Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET;IEEE Transactions on Electron Devices;2023-12
3. The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
4. Total Ionizing Dose Radiation Effect on Avalanche Robustness of 1200V Trench-type SiC Power MOSFETs;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
5. Investigation on Dynamic Degradation of SiC MOSFETs after Total Ionizing Dose Radiation;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29