The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92868
Reference16 articles.
1. cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy
2. Reliability of DH GaAs lasers at elevated temperatures
3. The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
4. Al2O3half‐wave films for long‐life cw lasers
5. Stabilization of aging‐induced self‐pulsations and the elimination of an initial temporally saturable mode of degradation in (Al,Ga)As lasers by means of facet coatings
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1. Silicon‐doping level dependent diffusion of Be in AlGaAs/GaAs quantum well lasers;Journal of Applied Physics;1992-11-15
2. Optoelectronic integrated four-channel transmitter array incorporating AlGaAs/GaAs quantum-well lasers;Journal of Lightwave Technology;1989-01
3. High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates;Japanese Journal of Applied Physics;1988-05-20
4. Effect of group V/III flux ratio on the reliability of GaAs/Al0.3Ga0.7As laser diodes prepared by molecular beam epitaxy;Applied Physics Letters;1988-01-25
5. Chapter 7 Quantum Confinement Heterostructure Semiconductor Lasers;Semiconductors and Semimetals;1987
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