Silicon‐doping level dependent diffusion of Be in AlGaAs/GaAs quantum well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352120
Reference27 articles.
1. The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy
2. Photoluminescence study of acceptors in AlxGa1−xAs
3. Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy
4. Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy
5. Control of Be diffusion in molecular beam epitaxy GaAs
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