Control of Zn diffusion in InP/InAlGaAs-based heterojunction bipolar transistors and light emitting transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
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4. Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy
5. Zn diffusion behavior at the InGaAsP/InP heterointerface grown using MOCVD
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