High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates-Reference-Cited by-同舟云学术

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High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates

Published:1988-05-20 Issue:Part 2, No. 5 Volume:27 Page:L889-L891
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hayakawa Toshiro,Takahashi Kosei,Suyama Takahiro,Kondo Masafumi,Yamamoto Saburo,Hijikata Toshiki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective epitaxial growth of AlGaAs/GaAs heterostructures on 300 mm Si(001) for red optical emission;Thin Solid Films;2021-03

2. IR/R/G/B laser diodes for multi-wavelength applications;Optical Review;2018-11-02

3. Physics and Applications of Enhanced Quantum Size Effects in (111)-Oriented Quantum Wells;Quantum Wells for Optics and Optoelectronics;1989

4. High‐power (2.2 W) cw operation of (111)‐oriented GaAs/AlGaAs single‐quantum‐well lasers prepared by molecular‐beam epitaxy;Journal of Applied Physics;1988-09

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