Effect of group V/III flux ratio on the reliability of GaAs/Al0.3Ga0.7As laser diodes prepared by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99484
Reference10 articles.
1. The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
2. The effect of substrate growth temperature on deep levels inn‐AlxGa1−xAs grown by molecular beam epitaxy
3. Effect of growth temperature on the photoluminescent spectra from Sn‐doped Ga1−xAlxAs grown by molecular beam epitaxy
4. The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy
5. The characterization and functional reliability of 45 Mbit/s optical transmitters containing MBE-grown lasers
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