Role of substrate temperature in molecular‐beam epitaxial growth of high‐power GaAs/AlGaAs lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106620
Reference7 articles.
1. Very low threshold current densities (under 100 A/cm2) in AlGaAs/GaAs single-quantum-well GRINSCH lasers grown by molecular beam epitaxy
2. Effect of group V/III flux ratio on the reliability of GaAs/Al0.3Ga0.7As laser diodes prepared by molecular beam epitaxy
3. Photoluminescence killer center in AlGaAs grown by molecular‐beam epitaxy
4. High-power ridge-waveguide AlGaAs GRIN-SCH laser diode
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1. 8.2 Epitaxy;Laser Systems;2011
2. Three decades of molecular beam epitaxy;Journal of Crystal Growth;2003-04
3. DLTS study of deep levels in GRIN–SCH–SQW GaAs/AlGaAs laser diode structures grown by MBE;Optical Materials;2001-06
4. Epitaxy-on-Electronics technology for monolithic optoelectronic integration: foundations, development, and status;Optical Engineering;1998-12-01
5. Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE;Acta Physica Polonica A;1996-10
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