Photoluminescence killer center in AlGaAs grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336938
Reference22 articles.
1. Effect of growth temperature on the photoluminescent spectra from Sn‐doped Ga1−xAlxAs grown by molecular beam epitaxy
2. Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy
3. Transport properties of Sn‐doped AlxGa1−xAs grown by molecular beam epitaxy
4. The effect of As/Ga flux ratio on the photoluminescent spectra from molecular beam epitaxially‐grown Sn‐doped AlxGa1−xAs
5. The effect of substrate growth temperature on deep levels inn‐AlxGa1−xAs grown by molecular beam epitaxy
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