Effect of growth temperature on the photoluminescent spectra from Sn‐doped Ga1−xAlxAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92372
Reference11 articles.
1. The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
2. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
3. Vacuum interlock system for molecular beam epitaxy
4. The incorporation and characterisation of acceptors in epitaxial GaAs
5. New Deep‐Level Luminescence in GaAs:Sn
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