Analyses of Saturable Behavior of Two-Step Photoexcitation in InAs/GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Intermediate-Band Solar Cells-Reference-Cited by-同舟云学术

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Analyses of Saturable Behavior of Two-Step Photoexcitation in InAs/GaAs/Al_0.3Ga_0.7As Intermediate-Band Solar Cells

Published:2015 Issue:9 Volume:64 Page:690-695
ISSN:0514-5163
Container-title:Journal of the Society of Materials Science, Japan
language:en
Short-container-title:J. Soc. Mat. Sci., Japan

Author:

ASAHI Shigeo¹,TERANISHI Haruyuki¹,KASAMATSU Naofumi¹,KADA Tomoyuki¹,KAIZU Toshiyuki¹,KITA Takashi¹

Affiliation:

1. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University

Publisher

Society of Materials Science, Japan

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/jsms/64/9/64_690/_pdf

Reference15 articles.

1. 1) W.Shockley and H.J. Queisser, “Detailed balance limit of efficiency of p-n junction solar cells”, Journal of Applied Physics, Vol.32, No.3, pp.510-519 (1961).

2. 2) A.Luque and A.Martí, “Increasng the efficiency of Idearl solar cells by photon induced transitions at intermediate levels”, Physical Review Letters, Vol.78, No.26, pp.5014-5017 (1997).

3. 3) T.Kita, “Energy conversion efficiency of solar cells”, Chap.6 (2012) CORONA.

4. 4) Y.Okada, T.Morioka, K.Yoshida, R.Oshima, Y.Shoji, T.Inoue, and T.Kita, “Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell”, Journal of Applied Physics, Vol.109, No.2, pp.024301-1-024301-4 (2011).

5. 5) D.G. Sellers, S.Polly, S.M. Hubbard, and M.F. Doty, “Analyzing carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells”, Applied Physics Letters, Vol.104, No.22, pp.223903-1-223093-4 (2014).

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