Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2844883
Reference23 articles.
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5. Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
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3. Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
4. Theoretical Progress on GaAs (001) Surface and GaAs/High-k Interface;High-k Gate Dielectrics for CMOS Technology;2012-08-23
5. The NH3 Nitridation Effects on a Al2O3 Passivation by Atomic Layer Deposition (ALD) in the HfO2/GaAs Systems;ECS Transactions;2011-10-04
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