Theoretical Progress on GaAs (001) Surface and GaAs/High-k Interface-Reference-Cited by-同舟云学术

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Theoretical Progress on GaAs (001) Surface and GaAs/High-k Interface

Published:2012-08-23 Issue: Volume: Page:407-431
ISSN:
Container-title:High-k Gate Dielectrics for CMOS Technology
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Author:

Wang Weichao,Xiong Ka,Wallace Robert M.,Cho Kyeongjae

Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Reference67 articles.

1. Fundamentals of III-V Semiconductor MOSFETs

2. Strain tuning of ferroelectric thin films;Schlom;Annu. Rev. Mater. Sci.,2007

3. Electronic structure at an abrupt GaAs-Ge interface;Baraff;J. Vac. Sci. Technol.,1977

4. Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces;Shen;J. Chem. Phys.,2010

5. Adsorption of oxygen on clean cleaved (110) gallium-arsenide surfaces;Dorn;Phys. Rev. B,1974

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1. Surface Coating Processes: From Conventional to the Advanced Methods; a Short Review;Lecture Notes in Mechanical Engineering;2020

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