Strain-induced surface morphology of slightly mismatched InxGa1−xAs films grown on vicinal (100) InP substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370530
Reference24 articles.
1. Effect of substrate misorientation on tear-drop-like hillock defect densities in InP and GaInAsP grown by metalorganic chemical vapor deposition
2. Origin and formation mechanism of elliptic-shaped surface defect on GaAs layers grown by molecular beam epitaxy
3. Domain formation on the reconstructed GaAs(001) surface
4. Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples
5. Modeling step bunching formed on vicinal GaAs(001) annealed inAsH3and hydrogen ambient
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1. Droplet Epitaxy as a Tool for the QD-Based Circuit Realization;Nonmagnetic and Magnetic Quantum Dots;2018-04-04
2. InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers;Journal of Crystal Growth;2011-01
3. The effects of relaxed InGaAs virtual substrates on the formation of self-assembled InAs quantum dots;Semiconductor Science and Technology;2008-04-04
4. Growth of InAs quantum-dot hatches on InGaAs/GaAs cross-hatch virtual substrates;Microelectronic Engineering;2007-05
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