Origin and formation mechanism of elliptic-shaped surface defect on GaAs layers grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. A comprehensive study and methods of elimination of oval defects in MBE-GaAs
2. Ga2O3 and particulates: The origins of oval defects in GaAs-related molecular-beam epitaxy
3. Origin of oval defects in GaAs layers grown by molecular beam epitaxy
4. Classification and origins of GaAs oval defects grown by molecular beam epitaxy
5. Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxy
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1. On the existence of submicron diameter current shunts in morphologically perfect device layers;Journal of Crystal Growth;2010-03
2. Laser scattering defects in MBE-grown GaAs epitaxial layers related to dislocations in semi-insulating substrates;Journal of Crystal Growth;2000-03
3. Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine;Applied Surface Science;1999-08
4. Strain-induced surface morphology of slightly mismatched InxGa1−xAs films grown on vicinal (100) InP substrates;Journal of Applied Physics;1999-05-15
5. Classification of morphological defects on GaAs/AlAsSb/GaSb structures prepared by MBE;Journal of Crystal Growth;1996-07
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