A comprehensive study and methods of elimination of oval defects in MBE-GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference40 articles.
1. Effect of arsenic source on the growth of high‐purity GaAs by molecular beam epitaxy
2. Reduction and origin of electron and hole traps in GaAs grown by molecular-beam epitaxy
3. MBE growth of high-quality GaAs
4. Properties of Schottky barriers and p‐n junctions prepared with GaAs and Alx Ga1−x As molecular beam epitaxial layers
5. On the origin and elimination of macroscopic defects in MBE films
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