Enhanced Performance of In(Ga)As QD Based Optoelectronic Devices through Improved Interface Quality between QD and Matrix Material-Reference-Cited by-同舟云学术

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Enhanced Performance of In(Ga)As QD Based Optoelectronic Devices through Improved Interface Quality between QD and Matrix Material

Published:2019-06-21 Issue:11 Volume:256 Page:1900138
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Panda Debiprasad¹,Chatterjee Arka²,Saha Jhuma³,Das Debabrata¹,Singh Sandeep Madhusudan¹,Pal Samir Kumar²,Chakrabarti Subhananda¹^ORCID

Affiliation:

1. Department of Electrical EngineeringIndian Institute of Technology BombayMumbai 400076India

2. Department of Chemical, Biological, and Macromolecular SciencesS. N. Bose National Centre for Basic SciencesKolkata 700106India

3. Centre for Research in Nanotechnology and ScienceIndian Institute of Technology BombayMumbai 400076India

Funder

Nano Mission Council, Department of Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900138

Reference52 articles.

1. Quantum-dot infrared photodetectors: Status and outlook

2. Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector

3. Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors

4. Quantum dot lasers: breakthrough in optoelectronics

5. Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots

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1. Time-resolved temperature-dependent photoluminescence spectroscopy of InGaAs/GaAs quantum well-dots;Journal of Luminescence;2023-03

2. Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure;physica status solidi (b);2021-05-20

3. Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural characteristics;Journal of Luminescence;2021-05

4. Enhanced performance of InAs/InGaAs dot-in-well heterostructure through varying capping thickness;Low-Dimensional Materials and Devices 2020;2020-08-21

5. Study on Inter Band and Inter Sub-Band Optical Transitions With Varying InAs/InGaAs Sub-Monolayer Quantum Dot Heterostructure Stacks Grown by Molecular Beam Epitaxy;IEEE Transactions on Nanotechnology;2020

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