Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96757
Reference8 articles.
1. Particulates: An origin of GaAs oval defects grown by molecular beam epitaxy
2. Initial Results of a High Throughput MBE System for Device Fabrication
3. Microtwinning and growth defects in GaAs MBE layers
4. On the origin and elimination of macroscopic defects in MBE films
5. An investigation of GaAs films grown by MBE at low substrate temperatures and growth rates
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