Microtwinning and growth defects in GaAs MBE layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. On the origin and elimination of macroscopic defects in MBE films
2. Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy
3. Preparation of Carbon‐Free GaAs Surfaces: AES and RHEED Analysis
4. Growth and perfection of chemically-deposited epitaxial layers of Si and GaAs
5. Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium Arsenide
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