Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy

Author:

Chai Young G.,Chow Robert

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 109 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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3. Higher performance optoelectronic devices with In0.21Al0.21Ga0.58As/In0.15Ga0.85As capping of III-V quantum dots;Journal of Luminescence;2019-06

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5. Epitaxial Crystal Growth: Methods and Materials;Springer Handbook of Electronic and Photonic Materials;2017

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