Growth and perfection of chemically-deposited epitaxial layers of Si and GaAs-Reference-Cited by-同舟云学术

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Growth and perfection of chemically-deposited epitaxial layers of Si and GaAs

Published:1968-01 Issue: Volume:3-4 Page:43-59
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Joyce B.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference78 articles.

1. The nucleation, growth, structure and epitaxy of thin surface films

2. A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques I.—experimental methods

3. A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques

4. B.A. Joyce, R.R. Bradley and G.R. Booker 15 (1967) 1167.

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