A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques-Reference-Cited by-同舟云学术

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A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques

Published:1966-08 Issue:128 Volume:14 Page:301-315
ISSN:0031-8086
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Booker G. R.,Joyce B. A.

Publisher

Informa UK Limited

Link

http://www.tandfonline.com/doi/pdf/10.1080/14786436608219013

Reference15 articles.

1. Tripyramids and associated defects in epitaxial silicon layers

2. Method of preparing Si and Ge specimens for examination by transmission electron microscopy

3. Growth of epitaxial silicon layers by vacuum evaporation

4. Growth mechanism and defect structures in epitaxial silicon

5. Double positioning in silver and gold layers deposited on mica

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