A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques I.—experimental methods-Reference-Cited by-同舟云学术

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A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques I.—experimental methods

Published:1966-08 Issue:128 Volume:14 Page:289-299
ISSN:0031-8086
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Joyce B. A.,Bradley R. R.

Publisher

Informa UK Limited

Link

http://www.tandfonline.com/doi/pdf/10.1080/14786436608219012

Reference9 articles.

1. A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques

2. Epitaxial Growth of Silicon by Hydrogen Reduction of SiHCl[sub 3] onto Silicon Substrates

3. Growth mechanism and defect structures in epitaxial silicon

4. Epitaxial Growth of Silicon from the Pyrolysis of Monosilane on Silicon Substrates

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