Structural properties of AlGaP films on GaP grown by gas-source molecular-beam epitaxy
Author:
Funder
European Commission
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growth of GaP and AlGaP on GaP(1 1 1)B using gas-source molecular-beam-epitaxy;Journal of Crystal Growth;2017-11
2. MBE growth and doping of AlGaP;Journal of Crystal Growth;2017-05
3. The electron-longitudinal optical phonon scattering rate in GaInAsP/InP stepped quantum well;International Journal of Modern Physics B;2016-10-12
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