MBE growth and doping of AlGaP-Reference-Cited by-同舟云学术

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MBE growth and doping of AlGaP

Published:2017-05 Issue: Volume:466 Page:6-15
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tremblay R.,Burin J.-P.,Rohel T.,Gauthier J.-P.,Almosni S.,Quinci T.,Létoublon A.,Léger Y.,Le Corre A.,Bertru N.,Durand O.,Cornet C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. Recent progress in lasers on silicon;Liang;Nat. Photonics,2010

2. C. Cornet, Y. Léger, C. Robert, Integrated Lasers on Silicon, ISTE-Elsevier, 2016.

3. Growth of Si/III–V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits;Furukawa;J. Cryst. Growth,2007

4. Antiphase domain tailoring for combination of modal and 4-quasi-phase matching in gallium phosphide microdisks;Guillemé;Opt. Express,2016

5. Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy;Grassman;Appl. Phys. Lett.,2009

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001);Crystal Growth & Design;2019-06-18

2. A Stress-Free and Textured GaP Template on Silicon for Solar Water Splitting;Advanced Functional Materials;2018-05-28

3. Transport properties of doped AlP for the development of conductive AlP/GaP distributed Bragg reflectors and their integration into light-emitting diodes;Applied Physics Letters;2018-05-07

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