Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.R13257/fulltext
Reference14 articles.
1. The compositional and structural changes that accompany the thermal annealing of (100) surfaces of GaAs, InP and GaP in vacuum
2. A missing-row dimer model of InP(100) (4×2) reconstruction as proposed by LEED, UPS and HREELS studies
3. Electronic and geometric structure of clean InP(001) and of the CaF2/InP(001) interface
4. Band-mapping of InP (100) along the ?X-line
5. k-resolved inverse photoemission of InP(100) surfaces
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