HBr/O2 plasma treatment followed by a bake for photoresist linewidth roughness smoothing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4865799
Reference44 articles.
1. 3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices
2. Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness
3. Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes
4. Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors
5. Benefits of plasma treatments on critical dimension control and line width roughness transfer during gate patterning
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4. Effects of ultraviolet and vacuum ultraviolet synchrotron radiation on organic underlayers to modulate line-edge roughness of fine-pitch poly-silicon patterns;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-09
5. Gate patterning strategies to reduce the gate shifting phenomenon for 14 nm fully depleted silicon-on-insulator technology;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-12-20
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