Gate patterning strategies to reduce the gate shifting phenomenon for 14 nm fully depleted silicon-on-insulator technology-Reference-Cited by-同舟云学术

Gate patterning strategies to reduce the gate shifting phenomenon for 14 nm fully depleted silicon-on-insulator technology

Published:2016-12-20 Issue:2 Volume:35 Page:021306
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:J. Vac. Sci. Technol. A

Author:

Ros Onintza¹,Pargon Erwine²,Fouchier Marc²,Gouraud Pascal³,Barnola Sebastien⁴

Affiliation:

1. STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France; Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France; CNRS, LTM, F-38000 Grenoble, France; and CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France

2. Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France; CNRS, LTM, F-38000 Grenoble, France; and CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France

3. STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France

4. CEA Grenoble, LETI, MINATEC Campus, F-38054 Grenoble, France

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Line width roughness (LWR) improvement and queue time elimination by a chlorine-based process in pitch doubling for improving throughput;2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2021-05-10

2. Fluorine-containing oxidizers for metal fuels in energetic formulations;Defence Technology;2019-02

3. Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review;Micromachines;2018-11-29

4. Plasma-Based Nanostructuring of Polymers: A Review;Polymers;2017-09-05