Affiliation:
1. Intel Technology CAD Division, 2200 Mission College Blvd., Santa Clara, CA, USA
Abstract
Fluctuation effects are becoming important in advanced VLSI devices because of their
increasing impact on circuit performance and chip yields. Accurate modelling of these
effects generally requires full 3D simulation, which is used here to analyse four of the
primary such effects. Polysilicon line edge roughness causes excess device leakage, which
can be reduced at the cost of decreased performance. Phase-shift mask defects can
reduce current drive and increase capacitance. Random dopant fluctuation, which
causes variation in threshold voltage, is evaluated for three technology generations and
it is shown that proper tip scaling can reduce these variations. Finally, a study of alpha
particle strikes evaluates the effectiveness of SOI in improving soft error reliability.
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture
Cited by
12 articles.
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