Controlled Anisotropic Wetting by Plasma Treatment for Directed Self-Assembly of High-χ Block Copolymers
Author:
Affiliation:
1. CNRS, CEA/LETI Minatec, Laboratoire des Technologies de la Microélectronique (LTM), Université Grenoble Alpes, 38000 Grenoble, France
2. CNRS, Bordeaux INP, LCPO, UMR 5629, Univ. Bordeaux, F-33600 Pessac, France
Funder
Agence Nationale de la Recherche
R?gion Auvergne-Rh?ne-Alpes
French RENATECH network
BPI France
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.4c01657
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1. Making lithography work for the 7-nm node and beyond in overlay accuracy, resolution, defect, and cost
2. Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate
3. FinFET based SRAMs in Sub-10nm domain
4. Design and Deep Insights into Sub-10 nm Spacer Engineered Junctionless FinFET for Nanoscale Applications
5. The future transistors
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