FinFET based SRAMs in Sub-10nm domain

Author:

Mohammed Mahmood UddinORCID,Nizam Athiya,Ali LiaquatORCID,Chowdhury Masud H.ORCID

Publisher

Elsevier BV

Subject

General Engineering

Reference74 articles.

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3. “5nm-gate nanowire FinFET,” digest of technical papers;Fu-Liang,2004

4. Asymmetric drain spacer extension (ADU) FinFETs for low-power and robust SRAMs;Goel;IEEE Trans. Electron. Dev.,2011

5. Reliability and energy efficiency of the tunneling transistor based 6T SRAM cell in sub-10nm domain;Mohammed;IEEE Transactions on Circuits and Systems II (TCAS II),2018

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