Photoluminescence studies of InGaAs/InAlAs strained double quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363474
Reference21 articles.
1. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters
2. Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded‐index separate‐confinement‐heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition
3. Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs
4. Photocurrent spectroscopy of 5‐nm‐wide InGaAs/InAlAs quantum wells and quadratic dependence of optical transition energies on quantum numbers
5. Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained‐layer quantum wells
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1. Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells;Journal of Alloys and Compounds;2024-05
2. Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness;Nanoscale Research Letters;2017-03-29
3. Bandgap control for the lattice-matched InGaAs/InAlAs/InP single quantum wells;IOP Conference Series: Materials Science and Engineering;2017-01
4. Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties;SPIE Proceedings;2016-03-08
5. Role of defects in the thermal droop of InGaN-based light emitting diodes;Journal of Applied Physics;2016-03-07
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