Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs-Reference-Cited by-同舟云学术

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Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs

Published:1989 Issue:10 Volume:36 Page:2249-2259
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ng G.-I.,Pavlidis D.,Jaffe M.,Singh J.,Chau H.-F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/1568/00040907.pdf?arnumber=40907

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sb Surfactant Effect on Defect Evolution in Compressively Strained In0.80Ga0.20As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy;Applied Physics Express;2008-11-14

2. Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers;Japanese Journal of Applied Physics;2005-06-10

3. Optimization of In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As high electron mobility transistor structures grown by solid-source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001

4. Heterojunction Transistors at Low Temperature;Device and Circuit Cryogenic Operation for Low Temperature Electronics;2001

5. Low-frequency noise in AlInAs/InGaAs/InP MBE- and MOCVD-grown HFETs;Semiconductor Science and Technology;2000-06-27

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