Low-frequency noise in AlInAs/InGaAs/InP MBE- and MOCVD-grown HFETs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs
2. Low-frequency noise characteristics of lattice-matched (x=0.53) and strained (x<0.53) In/sub 0.52/Al/sub 0.48/As/InxGa/sub 1-/xAs HEMT's
3. Low-frequency noise behavior of 0.15- mu m gate-length lattice-matched and lattice-mismatched MODFETs on InP substrates
4. Low frequency noise sources in InAlAs/InGaAs MODFETs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Theory of surface noise under Coulomb correlations between carriers and surface states;Journal of Applied Physics;2002-11
2. Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 μm gate length MOS transistors;IEEE Transactions on Electron Devices;2002-05
3. Coulomb suppression of surface noise;Applied Physics Letters;2001-04-02
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