Photocurrent spectroscopy of 5‐nm‐wide InGaAs/InAlAs quantum wells and quadratic dependence of optical transition energies on quantum numbers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359750
Reference11 articles.
1. Optical study of the electronic states ofIn0.53Ga0.47As/In0.52Al0.48As quantum wells in high electric fields
2. Enhancement of nonparabolicity effects in a quantum well
3. High-temperature heavy-hole and light-hole excitons and well-width dependence of excitons in InGaAs/InAIAs multiple-quantum-well structures
4. Luminescence excitation spectroscopy onGa0.47In0.53As/Al0.48In0.52As quantum-well heterostructures
5. Photocurrent spectroscopy in GaAs/AlGaAs multiple quantum wells under a high electric field perpendicular to the heterointerface
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1. Energy dependence of electron effective mass and effect of wave function confinement in a nanoscale In0.53Ga0.47As/In0.52Al0.48As quantum well;Journal of Applied Physics;2013-06-21
2. Fabrication and characterization of a novel infrared photoconductive sensor in InAlAs/InGaAs heterojunction;Solid-State Electronics;2008-01
3. RHEED observation of BaTiO 3 thin films grown by MBE;Surface Science;2003-04
4. Nonparabolic tendency of electron effective mass estimated by confined states in In0.53Ga0.47As/In0.52Al0.48As multi-quantum-well structures;Superlattices and Microstructures;1999-07
5. Photocurrent spectroscopy and study of subband parameters for heavy holes in nanoscale In0.53Ga0.47As/In0.52Al0.48As multiquantum well structures;Journal of Applied Physics;1999-04-15
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