Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365264
Reference34 articles.
1. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
2. Highly Reliable Thin Nitrided SiO2Films Formed by Rapid Thermal Processing in an N2O Ambient
3. Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness
4. Controlled nitrogen incorporation at the gate oxide surface
5. Oxide, interface, and border traps in thermal, N2O, and N2O‐nitrided oxides
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1. Samarium Oxide and Samarium Oxynitride Thin Film as Alternative Gate Oxide on Silicon Substrate;Reference Module in Materials Science and Materials Engineering;2017
2. Stabilization of the GeO2/Ge Interface by Nitrogen Incorporation in a One-Step NO Thermal Oxynitridation;ACS Applied Materials & Interfaces;2016-09-28
3. Investigation of SiO2 film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO3 & H2O vapor at varied process durations;Thin Solid Films;2014-11
4. Effects of wet-oxidized 4H-SiC annealed in HNO3/H2O vapour;Microelectronics International;2013-12-20
5. Investigation of thermally grown oxide on 4H-SiC by a combination of H2O and HNO3 vapor with varied HNO3 solution heating temperature;Applied Surface Science;2013-11
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