Stabilization of the GeO2/Ge Interface by Nitrogen Incorporation in a One-Step NO Thermal Oxynitridation-Reference-Cited by-同舟云学术

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Stabilization of the GeO2/Ge Interface by Nitrogen Incorporation in a One-Step NO Thermal Oxynitridation

Published:2016-09-28 Issue:40 Volume:8 Page:27339-27345
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Copetti Gabriela¹,Soares Gabriel V.¹,Radtke Cláudio¹

Affiliation:

1. Instituto de Física and ‡Instituto de Química, UFRGS, 91509-900 Porto Alegre, Brazil

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Fundação de Amparo à Pesquisa do Estado do Rio Grande do Sul

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b09244

Reference46 articles.

1. Academic and industry research progress in germanium nanodevices

2. High-k/Ge MOSFETs for future nanoelectronics

3. Desorption kinetics of GeO from GeO2/Ge structure

4. Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction

5. First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO2 interface

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1. Electrochemically deposited germanium nanowires: Structure and resistivity against high-temperature oxidation;Applied Surface Science;2024-05

2. Electrochemically Deposited Germanium Nanowires: Structure and Resistivity Against High-Temperature Oxidation;2023

3. Anomalous nucleation of crystals within amorphous germanium nanowires during thermal annealing;Nanotechnology;2021-04-26

4. Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor;International Journal of Energy Research;2021-04-13

5. Novel route for preparation of ST12-Ge nanoparticles at ambient pressure;Materials Science and Engineering: B;2020-11

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