First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO2 interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3702816
Reference23 articles.
1. Electronic properties of (100)Ge/Ge(Hf)O2 interfaces: A first-principles study
2. High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation
3. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
4. Nanoscale germanium MOS Dielectrics-part I: germanium oxynitrides
5. High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology
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2. Improvement on Ge/GeOx/Tm2O3/HfO2 Gate Performance by Forming Gas Anneal;ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC);2021-09-13
3. Identification of interfacial defects in a Ge gate stack based on ozone passivation;Semiconductor Science and Technology;2018-10-04
4. Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing;Japanese Journal of Applied Physics;2018-09-18
5. Investigation of Tm2O3 As a Gate Dielectric for Ge MOS Devices;ECS Transactions;2018-07-20
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