Investigation of SiO2 film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO3 & H2O vapor at varied process durations

Author:

Poobalan Banu,Moon Jeong Hyun,Kim Sang-Cheol,Joo Sung-Jae,Bahng Wook,Kang In Ho,Kim Nam-Kyun,Cheong Kuan YewORCID

Funder

Korea Government — Ministry of Knowledge Economy

Ministry of Science, Technology, and Innovation (MOSTI), Malaysia

Universiti Sains Malaysia (USM)

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference55 articles.

1. Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias-temperature stress;Tadjer;Mater. Sci. Forum,2013

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3. Development of 1200V, 3.7mΩ-cm2 4H-SiC DMOSFETs for advanced power applications;Ryu;Mater. Sci. Forum,2012

4. High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen;Zippelius,2010

5. Present status and future prospects for electronics in electric vehicles/hybrid electric vehicles and expectations for wide-bandgap semiconductor devices;Hamada,2010

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