Influence of phosphine on Ge/Si(001) island growth by chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1604957
Reference29 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
3. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures
4. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
5. Thermodynamics of the Size and Shape of Nanocrystals: Epitaxial Ge on Si(001)
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1. Epitaxy of Strained Si/Si1-xGexHeterostructures;Silicon Technologies;2013-03-19
2. Control of Ge/Si intermixing during Ge island growth;Applied Physics Letters;2009-02-02
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4. Evolution of Thermodynamic Potentials in Closed and Open Nanocrystalline Systems: Ge-Si:Si(001) Islands;Physical Review Letters;2008-06-05
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