Control of Ge/Si intermixing during Ge island growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3078289
Reference16 articles.
1. Kinetic control of Ge(Si)∕Si(100) dome cluster composition
2. Kinetic origin of island intermixing during the growth of Ge on Si(001)
3. Alloying Mechanisms for Epitaxial Nanocrystals
4. Thermodynamics of Coherently-Strained GexSi1-x Nanocrystals on Si(001): Alloy Composition and Island Formation
5. Coarsening, Mixing, and Motion: The Complex Evolution of Epitaxial Islands
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1. Ultrathin films of Ge on the Si(100)2 × 1 surface;Surface and Interface Analysis;2017-11-28
2. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system;Applied Surface Science;2016-11
3. Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition;Nanotechnology;2015-02-20
4. Si/Ge intermixing during Ge Stranski–Krastanov growth;Beilstein Journal of Nanotechnology;2014-12-09
5. Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source;Nanotechnology;2014-03-04
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