Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source-Reference-Cited by-同舟云学术

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Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source

Published:2014-03-04 Issue:13 Volume:25 Page:135606
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Vanacore G M,Zani M,Bollani M,Bonera E,Nicotra G,Osmond J,Capellini Giovanni,Isella G,Tagliaferri A

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/25/i=13/a=135606/pdf

Reference56 articles.

1. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

2. Si/Ge nanostructures

3. SiGe nanostructures

4. Growth and self-organization of SiGe nanostructures

5. Strain distribution in a transistor using self-assembled SiGe islands in source and drain regions

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures;Materials Science in Semiconductor Processing;2017-01

2. Ge deposition on Si(1 0 0) in the conditions close to dynamic equilibrium between islands growth and their decay;Applied Surface Science;2016-01

3. Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C;Nanoscale Research Letters;2015-07-16

4. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source;Journal of Applied Physics;2015-03-14

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