Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Published:2015-03-14 Issue:10 Volume:117 Page:104309
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Vanacore G. M.¹,Nicotra G.²,Zani M.¹,Bollani M.³,Bonera E.⁴,Montalenti F.⁴,Capellini G.⁵,Isella G.⁶,Osmond J.⁷,Picco A.⁴,Boioli F.⁴,Tagliaferri A.¹

Affiliation:

1. CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy

2. IMM-CNR, Stradale Primosole 50, I-95121 Catania, Italy

3. CNR-IFN, LNESS, Via Anzani 42, I-22100 Como, Italy

4. Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano, Italy

5. Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma, Italy

6. CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como, Italy

7. ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona), Spain

Funder

Italian Ministry of Education and Research (MIUR)

Fondazione Cariplo (Cariplo Foundation)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914409

Reference39 articles.

1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

2. Growth and self-organization of SiGe nanostructures

3. Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset

4. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

5. Local equilibrium and global relaxation of strainedSiGe∕Si(001)layers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C;Nanoscale Research Letters;2015-07-16

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3