Strain distribution in a transistor using self-assembled SiGe islands in source and drain regions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2214150
Reference19 articles.
1. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
2. Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistors
3. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
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3. Morphological Instability of High Ge Percent SiGe Films Grown by Ultra-High Vacuum Chemical Vapor Deposition;ECS Transactions;2014-08-12
4. Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source;Nanotechnology;2014-03-04
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