Comparison of nanoscale measurements of strain and stress using electron back scattered diffraction and confocal Raman microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3026542
Reference19 articles.
1. Manufacturable Processes for $\leq$ 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances
2. Manufacturable Processes for $\leq$ 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances
3. Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates
4. Micro-Raman measurement of bending stresses in micromachined silicon flexures
5. High-resolution elastic strain measurement from electron backscatter diffraction patterns: New levels of sensitivity
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