Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2749281
Reference12 articles.
1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
3. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
4. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
5. Recombination dynamics of free and localized excitons inGaN/Ga0.93Al0.07Nquantum wells
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